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用于热插拔和软启动的ASFET

可靠的线性模式，增强的SOA与低导通电阻

无论是云还是边缘技术，都和我们忙碌的生活息息相关。我们的日常生活很大程度上依赖于始终开启的机架式计算机、通信和存储系统。要确保这些系统不会出现电源中断，在将替换电路板插入运行中的系统时保护上面的器件，必须小心控制冲击电流。在常规MOSFET中，强大的SOA性能和低导通电阻是互斥的。Nexperia专用于热插拔和软启动的MOSFET在单个器件上同时提供这两种功能，并针对不间断的运行要求进行了优化。

用于热插拔和软启动的ASFET专为支持始终开机的应用和设备而设计：

  • 当在背板中引入电容负载时，需要采用具备强劲线性模式性能和增强安全工作区域(SOA)的MOSFET来高效可靠地控制冲击电流
  • 一旦安全接通替换电路板，MOSFET便会完全导通。在此运行模式下，具有低导通电阻值是最重要的，它有助于最大限度地保持低温和高系统效率
   
    

用于通信基础设施的热插拔

 

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最新新闻和博客

  • 新闻稿
3月 22, 2023

Nexperia推出首款采用SMD铜夹片LFPAK88封装的热插拔专用MOSFET(ASFET)，管脚 ...
  • 博客文章
3月 17, 2023

Extending hotswap performance with LFPAK88
  • 博客文章
7月 27, 2021

利用增强型SOA缩小热插拔管脚尺寸

最新视频

Understanding MOSFET safe operating area – Quick Learning

Understanding MOSFET safe operating area – Quick Learning
LFPAK 5x6 ASFETs with enhanced SOA technology for hotswap ...
Design considerations with sub-milliohm MOSFETs – Quick Learning
SOA的重要性

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ASFETs for Hotswap and Soft Start
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产品

型号 描述 状态 快速访问
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Development
PSMN1R0-30YLE N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Development
PSMN1R1-30YLE N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R6-25YLE N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R9-80SSE N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R1-30YLE N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R5-80SSE N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 Qualification
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Qualification
PSMN3R4-30BLE N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN4R2-80YSE N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN8R9-100BSE N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK Production
PSMNR56-25YLE N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR67-30YLE N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR82-30YLE N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR89-25YLE N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR98-25YLE N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
Visit our documentation center for all documentation

Application note (2)
文件名称 标题 类型 日期
AN50006 Power MOSFETs in linear mode Application note 2022-04-12
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Leaflet (2)
文件名称 标题 类型 日期
nexperia_document_leaflet_LFPAK88_2022_CHN LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022 LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)
文件名称 标题 类型 日期
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

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