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BUK7E3R5-60E

N-channel TrenchMOS standard level FET

标准电平N沟道MOSFET,采用SOT226封装,使用TrenchMOS技术。该产品设计符合AEC Q101标准,适用于高性能汽车电子应用。

该产品已停产。参见单击此处了解停产信息和替代产品。

Features and benefits

  • 符合AEC Q101汽车标准
  • 重复雪崩耐受
  • 额定温度为175 °C,适用于对热性能要求苛刻的环境
  • 真正的标准电平栅极,175 °C时VGS(th)额定值大于1 V

Applications

  • 12 V汽车系统
  • 马达、灯具和螺线管控制
  • 微型混合动力起停应用
  • 变速箱控制
  • 超高性能电源开关

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7E3R5-60E SOT226 I2PAK End of life N 1 60 3.5 175 120 34.8 114 293 59.3 3 Y 6685 851 2012-09-05

封装

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
BUK7E3R5-60E BUK7E3R5-60E,127
(934066632127)
Withdrawn / End-of-life BUK7E3R5 60E SOT226
I2PAK
(SOT226)
SOT226 Not available

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BUK7E3R5-60E BUK7E3R5-60E,127 BUK7E3R5-60E rohs rhf
品质及可靠性免责声明

文档 (19)

文件名称 标题 类型 日期
BUK7E3R5-60E N-channel TrenchMOS standard level FET Data sheet 2017-04-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
BUK7E3R5-60E BUK7E3R5-60E Spice model SPICE model 2012-10-04
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
BUK7E3R5-60E_RC_Thermal_Model BUK7E3R5-60E Thermal design model Thermal design 2021-01-18
BUK7E3R5-60E BUK7E3R5-60E Thermal model Thermal model 2012-10-07

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BUK7E3R5-60E BUK7E3R5-60E Spice model SPICE model 2012-10-04
BUK7E3R5-60E_RC_Thermal_Model BUK7E3R5-60E Thermal design model Thermal design 2021-01-18
BUK7E3R5-60E BUK7E3R5-60E Thermal model Thermal model 2012-10-07
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.