×

BUK9Y11-30B

N-channel TrenchMOS logic level FET

逻辑电平N沟道增强型场效应晶体管(FET),采用塑料封装,使用恩智浦高性能汽车电子(HPA) TrenchMOS技术。该产品设计符合相应AEC标准,适用于汽车电子关键型应用。

该产品已停产。参见单击此处了解停产信息和替代产品。

Features and benefits

  • 符合AEC Q101标准
  • 低导通电阻,因而导通损耗很小
  • 适用于逻辑电平栅极驱动源
  • 额定温度为175 °C,适用于对热性能要求苛刻的环境

Applications

  • 12 V负载
  • 汽车系统
  • 通用电源开关
  • 马达、灯具和螺线管

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK9Y11-30B SOT669 LFPAK56; Power-SO8 End of life N 1 30 9 11 12 175 59 5.4 75 20 1.5 Y 1211 341 2011-02-17

封装

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
BUK9Y11-30B BUK9Y11-30B,115
(934060171115)
Discontinued / End-of-life 91130B SOT669
LFPAK56; Power-SO8
(SOT669)
SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BUK9Y11-30B BUK9Y11-30B,115 BUK9Y11-30B rohs rhf
品质及可靠性免责声明

文档 (22)

文件名称 标题 类型 日期
BUK9Y11-30B N-channel TrenchMOS logic level FET Data sheet 2017-05-29
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BUK9Y11_30B BUK9Y11-30B SPICE model SPICE model 2012-04-11
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
BUK9Y11-30B_RC_Thermal_Model BUK9Y11-30B Thermal design model Thermal design 2021-01-18
BUK9Y11-30B BUK9Y11-30B Thermal model Thermal model 2009-06-22
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BUK9Y11_30B BUK9Y11-30B SPICE model SPICE model 2012-04-11
BUK9Y11-30B_RC_Thermal_Model BUK9Y11-30B Thermal design model Thermal design 2021-01-18
BUK9Y11-30B BUK9Y11-30B Thermal model Thermal model 2009-06-22
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.