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PSMN1R5-40ES

N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.

标准电平N沟道MOSFET，采用I2PAK (SOT226)封装，额定工作温度为175 °C。该产品设计适用于各种工业、通信及家用设备。

该产品已停产。参见单击此处了解停产信息和替代产品。

Features and benefits

  • 低开关和导通损耗，因而效率高
  • 坚固耐用的结构，适合要求苛刻的应用
  • 标准电平栅极

Applications

  • 电池供电工具
  • 负载开关
  • 马达控制
  • 不间断电源

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R5-40ES SOT226 I2PAK End of life N 1 40 1.6 175 120 32 133 338 117 3 N 9710 2041.9999 2011-04-15

封装

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R5-40ES PSMN1R5-40ES,127
(934065161127)		 Obsolete SOT226
I2PAK
(SOT226) 		SOT226 Not available

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R5-40ES PSMN1R5-40ES,127 PSMN1R5-40ES rohs rhf
品质及可靠性免责声明

文档 (19)

文件名称 标题 类型 日期
PSMN1R5-40ES N-channel 40 V, 1.6 mΩ standard level MOSFET in I2PAK. Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
PSMN1R5-40ES_Zth PSMN1R5-40ES_Zth SPICE model 2017-11-25
PSMN1R5_40ES PSMN1R5_40ES Spice Model SPICE model 2011-05-31
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
PSMN1R5-40ES_RCthermal PSMN1R5-40ES_RCthermal Thermal design 2017-11-25
PSMN1R5-40ES PSMN1R5-40ES Thermal model Thermal model 2011-04-15

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R5-40ES_Zth PSMN1R5-40ES_Zth SPICE model 2017-11-25
PSMN1R5_40ES PSMN1R5_40ES Spice Model SPICE model 2011-05-31
PSMN1R5-40ES_RCthermal PSMN1R5-40ES_RCthermal Thermal design 2017-11-25
PSMN1R5-40ES PSMN1R5-40ES Thermal model Thermal model 2011-04-15
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册