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60 V, single N-channel Trench MOSFET
N沟道增强型场效应晶体管(FET),采用使用Trench MOSFET技术的无引脚超小型DFN1006-3 (SOT883)表面贴装器件(SMD)塑料封装。
Alternatives
Features and benefits
- 极快速开关
- Trench MOSFET技术
- 高达2 kV的ESD保护
- 兼容逻辑电平
- 0.37 mm高度的超薄封装结构
Applications
- 继电器驱动器
- 高速线路驱动器
- 低端负载开关
- 开关电路
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | integrated gate-source ESD protection diodes | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N7002BKMB | SOT883B | DFN1006B-3 | End of life | N | 1 | 60 | 20 | 1600 | 2000 | Y | 150 | 0.45 | 0.1 | 0.5 | 0.36 | 1.6 | N | 33 | 7 | 2012-05-11 |
封装
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
2N7002BKMB | 2N7002BKMB,315 (934065862315) |
Obsolete | 0000 0001 |
DFN1006B-3 (SOT883B) |
SOT883B |
REFLOW_BG-BD-1
|
SOT883B_315 |
Series
文档 (16)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
2N7002BKMB | 60 V, single N-channel Trench MOSFET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN1006B-3_SOT883B_mk | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
SOT883B | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | Package information | 2022-05-20 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
2N7002BKMB_22_02_2012 | 2N7002BKMB.22_02_2012 Spice parameter | S-parameter | 2012-04-12 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
2N7002BKMB_22_02_2012 | 2N7002BKMB.22_02_2012 Spice parameter | S-parameter | 2012-04-12 |
SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.