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BSH202

P-channel vertical D-MOS logic level FET

逻辑电平P沟道增强型场效应晶体管(FET),采用使用垂直D-MOS技术的塑料封装。该产品仅设计适合用于计算、通信、消费电子和工业应用。

该产品已停产。参见单击此处了解停产信息和替代产品。

Features and benefits

  • 占用面积小,节省PCB空间
  • 快速开关特性,适用于高频应用
  • 适用于逻辑电平栅极驱动源
  • 适用于低栅极驱动源

Applications

  • 电池供电应用
  • 高速数字接口

参数类型

型号 Package version Package name Product status Channel type Nr of transistors Automotive qualified Release date
BSH202 SOT23 SOT23 End of life P 1 N 2011-01-24

封装

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
BSH202 BSH202,215
(934054718215)
Discontinued / End-of-life %J7 SOT23
(SOT23)
SOT23 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT23_215
BSH202,235
(934054718235)
Obsolete %J7 SOT23_235

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BSH202 BSH202,215 BSH202 rohs rhf rhf
BSH202 BSH202,235 BSH202 rohs rhf rhf
品质及可靠性免责声明

文档 (18)

文件名称 标题 类型 日期
BSH202 P-channel enhancement mode MOS transistor Data sheet 1998-07-31
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT23 3D model for products with SOT23 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28
SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Package information 2022-10-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BSH202_8_20_2010 BSH202_8_20_2010 Spice parameter S-parameter 2012-04-12
BSH202 BSH202 SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BSH202_8_20_2010 BSH202_8_20_2010 Spice parameter S-parameter 2012-04-12
BSH202 BSH202 SPICE model SPICE model 2012-06-08
SOT23 3D model for products with SOT23 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.