Current-Sharing Technology in Parallel MOSFET Applications
Feb. 16th, 2021 – With the advance of power application technology, extremely high levels of currents are being required. These applications have reached power level requirements at which the implementation of one MOSFET is no longer sufficient, forcing designers to resort to placing MOSFETs in parallel. This article discusses current-sharing technology in parallel MOSFET applications.
Read in: Power Electronics News
Protecting Automotive Ethernet from ESD
Jan. 28th, 2021 – Automotive Ethernet will be the solution to handle data payload but new ESD protection devices are required to ensure safety. Read this article and learn how System-Efficient ESD Design (SEED) modelling helps develop automotive Ethernet ESD protection that meets Open Alliance specifications.
Read in: Power Systems Design
Cutting-edge SiGe Rectifiers: Enhancing Safe Operating Area for High Temperature, High-Frequency Applications
Jan. 28th, 2021 – Nexperia has developed a new rectifier technology based on silicon germanium (SiGe) for applications in the 100-200V range. These new power diodes combine the efficiency of silicon Schottky rectifiers with the thermal stability of Fast Recovery rectifiers, enabling engineers to optimize power designs for high efficiency.
Read in Power Electronics News
Interview 2021 Semiconductor Industry Outlook (Chinese)
Dec. 26th, 2020 – Paul Zhang, SVP Sales & Marketing and General Manager of China gives Elecfans 电子发烧友 an outlook on the three major opportunities in 2021, namely vehicle electrification, smart driving and 5G communications. He discusses the advantages of Nexperia’s industrial footprint and how the company plans to expand production capacity.
Read in: Elefans 电子发烧友
Interview with executives pushing innovation in the semiconductor industry
Oct. 15th, 2020 – Interview with two of Nexperia’s youngest executives (Mark Roeloffzen and Robby Ferdinandus) describe the journey, motivations, and lessons from their rapidly developing careers in the semiconductor industry. In Part 2 of the interview they detail the key innovations in the semiconductor industry and share Nexperia’s vision for the future.
Read in: Wevolver
Proving the Ruggedness of GaN in auto and demanding applications
August 1st, 2020 – Cover story discussing product robustness, quality and reliability issues at high voltage and high temperatures, for Nexperia’s latest 650 V power GaN FET technology which is now qualified in accordance with AEC-Q101 automotive standard.
Read in: Power Electronics Europe
Consistent portfolio expansion: Silicon, SiGe and GaN components
June 25th, 2020 – 650 V GaN FETs, SiGe rectifiers and a further expansion of the AEC-Q101-qualified diode and transistor program are among the latest innovations in the power semiconductor sector at Nexperia.
Read in: Markt & Technik
Second generation GaN takes on SiC in electric vehicles
June 6th, 2020 – This article looks at Nexperia’s second generation GaN technology and the roadmap for electric vehicles and industrial power supplies.
Read in: EENews
Towards 5G Mobility: The Role Of Efficient Discrete Semiconductors
Jan 27th, 2020 – This article explains the technical requirements of 5G and describes new components that enable Vehicle-to-Everything connectivity in smart cars. Read part 3 of the series about ADAS and Autonomous Vehicles and learn how another upcoming technological development is impacted by the performance of semiconductors.
Read in: Wevolver platform
New dynamics in GaN semiconductors – Big leap in sales expected
Jan 27th, 2020 – Since the end of 2019, every top ten manufacturer of Silicon-based power MOSFETs has either already had its own GaN power semiconductors on the market or has a clearly communicated strategy of how it will be added. Read more about the growing market and how the example of Nexperia shows that GaN technology meets the requirements of the automotive industry.
Read in: Elektroniknet.de (GER)
Nexperia gets new owner
Dec 24th, 2019 – Nexperia announced that Wingtech Technology – a Chinese computer and telecom equipment manufacturer – has officially obtained a controlling stake in Nexperia. Read about how the new investor opens up opportunities.
Read in: Electronics Weekly
Putting High-Performance Computing Into Cars: Automotive Discrete Semiconductors For Autonomous Driving
Dec 11th, 2019 – Reliable, small, and lightweight hardware that meets increasing performance requirements is today’s engineering challenge in the automotive industry. Dive into part 2 of the series about ADAS and Autonomous Vehicles and how new semiconductor products can increase reliability and performance.
Read in: Wevolver platform
Nexperia joins the GaN FET market for high voltage applications
Nov 19th, 2019 – Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA. Read more about this strategic step and the new product.
Read in: PowerPulse.net
How Advanced Driver-Assistance Systems (ADAS) Impact Automotive Semiconductors
Nov 12th, 2019 – As the amount of advanced driver-assistance systems (ADAS) in vehicles increase, so does the requirement to innovate semiconductors to increase safety, reduce size, and complexity. This article is part of a series about ADAS and Autonomous Vehicles.
Read in: Wevolver platform
MOSFET Qrr: Ignore at your peril in the pursuit of power efficiency
Sep 6th, 2019 – Technical article exploring the significance of the parameter reverse recovery charge Qrr.
Read in: EDN (English) or EETimes China (Chinese)
Combination or Configurable Logic: When to Use Which and How?
Aug 20th, 2019 - Combination and configurable logic devices provide the flexibility to implement various logic functions with a reduced pin count, can lower system cost, simplify inventory & assembly, and improve the qualification process. Find out how to design more with less.
Read in: PowerPulse.net
Constant Current LED Drivers: Cost Efficient, Reliable, and Easy to Use
Aug 16th, 2019 – LEDs are widely used across all market segments. The vast majority of applications use LEDs with currents below 500 mA. This technical article discusses design and power considerations necessary to use constant-current LED drivers.
大陆汽车集团向表现出色的供应商颁发“2018年年度供应商”奖
2019年7月26日， 年度供应商奖旨在表彰在质量、技术、互动、成本和采购条件等各个层面对客户满意度作出杰出贡献的供应商。阅读大陆集团颁发奖项的更多背景知识以及14个奖项类别。Nexperia很荣幸成为“电子（分立器件）”类的获奖者。
文章地址：Automotive World或Automobilwoche（德语）
Nexperia Honored with Bosch Global Supplier Award
July 11th, 2019 – Nexperia received a Bosch Global Supplier Award in the category ‘Purchasing of direct materials – Mobility Solutions’. Nexperia was one of only 47 companies from Bosch’s 43,000-strong supplier base to be honored with such an award for its outstanding performance and teamwork in 2017-2018.
Read in: EEPower
先进的LFPAK MOSFET技术助力实现更高功率密度
2019年6月21日 - Power Electronics News详细报道了Nexperia先进的LFPAK MOSFET特性和应用。了解LFPAK88和LFPAK系列其他产品如何缩小产品尺寸并提高功率密度，从而为工业和汽车设计带来价值。
Nexperia：在德国纽伦堡举办的PCIM展会上展示电源技术
2019年5月17日 – Nexperia通过封装实现更高功率密度。阅读了解有关在德国纽伦堡举办的PCIM贸易展上展示的LFPAK技术的更多信息。
Nexperia第一次参加慕尼黑上海电子展就大获成功
2019年3月26日 – Nexperia第一次参加慕尼黑上海电子展期间，对张鹏岗（Nexperia大中华区销售资深副总裁兼中国区总经理）的采访。阅读了解张鹏岗对Nexperia最初两年的强劲增长有何看法，以及针对中国未来发展和业务开发的管理战略。
文章地址：AET China（中文）
为什么Trench肖特基整流器倍受青睐
2019年3月3日 – 为实现高效设计，我们尝试利用尽可能理想的解决方案。Nexperia的Trench肖特基整流器具备低损耗、热失控下的稳定性以及出色的EMC性能，从而助力我们尽可能实现理想解决方案
文章地址：EETimes China（中文）或EEPower（英文）
Nexperia独立两年实现35%的收入增长
2019年2月7日 – 作为独立公司仅两年时间，Nexperia即领先市场同行，实现收入增长超过35%，推出了更多的新产品，将年度产能扩产至超过1000亿件。
文章地址：Global Banking and Finance、Elektronik（德语）、Electronique（法语）、ESM（中文）
Nexperia计划在2019年将销售额提高20%
2018年11月29日 – EETimes Japan采访了首席执行官Frans Scheper和日本销售主管兼高级总监Kazunari Kuniyoshi，了解Nexperia在独立后18个月内的强劲表现，以及有利于日本市场未来增长和业务发展的管理战略。了解资本投资的重要性、汽车市场以及Nexperia在功率分立器件领域的长远目标。
公司市值几乎翻了一番。闻泰科技收购Nexperia的多数股权
2018年10月25日 - 中国公司闻泰科技希望收购去年从恩智浦分拆的Nexperia的多数股权。通过收购，闻泰科技有望进入Nexperia最强势的领域——汽车市场。
USB 3.2带来设计挑战
2018年8月3日 - 双倍数据速率和无需更换USB Type-C线缆意味着USB 3.2已经成为现实。虽然这是一项快速、方便的USB升级，但还是带来了一些设计挑战。了解USB 3.2/USB Type-C以及Nexperia如何为这些新标准提供优化的ESD和浪涌保护解决方案。
荷兰商业新闻广播采访Nexperia首席执行官Frans Scheper
2月28日，NexperiaCEO Frans Scheper接受了荷兰商业新闻广播的采访。值得一听！