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BAS101; BAS101S

High-voltage switching diodes

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.

特性

  • High switching speed: trr ≤ 50 ns

  • Low leakage current

  • Repetitive peak reverse voltage: VRRM ≤ 300

  • Low capacitance: Cd ≤ 2 pF

  • Reverse voltage: VR ≤ 300 V

  • Small SMD plastic package

  • AEC-Q101 qualified

目标应用

  • High-speed switching

  • High-voltage switching

  • Voltage clamping

  • Reverse polarity protection

文档 (1)

文件名称标题类型日期
Nexperia_Selection_guide_2023Nexperia Selection Guide 2023Selection guide2023-05-10

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