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- 0.7 V至2.75 V的宽电源电压范围
- 高抗噪性
- 符合JEDEC标准:
- JESD8-12A.01(宽范围:0.8 V至1.3 V)
- JESD8-12A.01(正常范围:1.1 V至1.3 V)
- JESD8-11A.01(1.4 V至1.6 V)
- JESD8-7A(1.65 V至1.95 V)
- JESD8-5A.01(2.3 V至2.7 V)
- ESD保护:
- HBM ANSI/ESDA/JEDEC JS-001 2类超过2 kV
- CDM JESD22-C101E超过1000 V
- 低静态功耗;ICC = 0.6 µA(85 °C最大 )
- 闭锁性能超过100 mA,符合JESD 78 II类标准
- 输入可接受高达2.75 V的电压
- 低噪声过冲和欠冲,小于VCC的10 %
- IOFF电路提供局部掉电模式操作
- 多种封装选择
- 额定温度范围为-40 °C至+85 °C
参数类型
型号 | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
74AXP1G98GM | End of life | 0.7 - 2.75 | CMOS | ± 4.5 | 4.5 | 70 | 1 | ultra low | -40~85 | 322 | 8.3 | 164 | XSON6 |
封装
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74AXP1G98GM | 74AXP1G98GMH (935301606125) |
Obsolete | no package information |
Series
文档 (5)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AXP1G98 | Low-power configurable multiple function gate | Data sheet | 2017-03-30 |
axp1g98 | 74AXP1G98 IBIS model | IBIS model | 2015-11-10 |
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 | AXP – Extremely low-power logic technology portfolio | Leaflet | 2019-04-05 |
AXP_banner3 | Low-power configurable multiple function gate | Marcom graphics | 2013-06-25 |
74AXP1G98GM_Nexperia_Product_Reliability | 74AXP1G98GM Nexperia Product Reliability | Quality document | 2022-05-04 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
axp1g98 | 74AXP1G98 IBIS model | IBIS model | 2015-11-10 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.