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单低VCEsat (BISS)功率晶体管

使您的设计保持最低功耗和发热

我们的‘突破性小信号’(BISS)晶体管名副其实,在提供最优电源性能的同时节省空间。这些低VCEsat器件与采用同样封装的标准晶体管相比,功率耗损更低, 能效更高。它们的灵活性更高,可帮助简化电路布局,且采用更小型的封装,为您节省宝贵的PCB空间。

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Low VCEsat (BISS) transistors
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产品

型号 描述 状态 快速访问
LFPAK bipolar transistors Nexperia bipolar transistors in LFPAK56 and LFPAK56D - the true power packages for smart efficiency ACT
PHPT60406NY 40 V, 6 A NPN high power bipolar transistor Production
PHPT60406PY 40 V, 6 A PNP high power bipolar transistor Production
PHPT60410NY 40 V, 10 A NPN high power bipolar transistor Production
PHPT60410PY 40 V, 10 A PNP high power bipolar transistor Production
PHPT60415NY 40 V, 15 A NPN high power bipolar transistor Production
PHPT60415PY 40 V, 15 A PNP high power bipolar transistor Production
PHPT60603NY 60V, 3 A NPN high power bipolar transistor Production
PHPT60603PY 60 V, 3 A PNP high power bipolar transistor Production
PHPT60606NY 60 V, 6 A NPN high power bipolar transistor Production
PHPT60606PY 60 V, 6 A PNP high power bipolar transistor Production
PHPT60610NY 60 V, 10 A NPN high power bipolar transistor Production
PHPT60610PY 60 V, 10 A PNP high power bipolar transistor Production
PHPT61003NY 100 V, 3 A NPN high power bipolar transistor Production
PHPT61003PY 100 V, 3A PNP high power bipolar transistor Production
PHPT61006NY 100 V, 6 A NPN high power bipolar transistor Production
PHPT61006PY 100 V, 6 A PNP high power bipolar transistor Production
PHPT61010NY 100 V, 10 A NPN high power bipolar transistor Production
PHPT61010PY 100 V, 10 A PNP high power bipolar transistor Production
PBSS5540Z-Q 40 V low VCEsat PNP transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)

文件名称 标题 类型 日期
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)

文件名称 标题 类型 日期
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

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交叉参考