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PBLS1501V

15 V PNP BISS loadswitch

低VCEsat PNP晶体管和NPN配电阻晶体管,采用单个封装

该产品已停产。参见单击此处了解停产信息和替代产品。

Features and benefits

  • 低VCEsat (BISS)晶体管和配电阻晶体管,采用单个封装
  • 低“阈值”电压(<1 V)(与MOSFET相比)
  • 需要低驱动功耗
  • 空间节约型解决方案
  • 元器件数量更少

Applications

  • 电源线路开关
  • 电池充电器开关
  • 用于LED、驱动器和背光应用的高端开关
  • 便携式设备

参数类型

型号 Package version Package name Size (mm) Polarity Ptot [max] (mW) VCEO [max] (V) IC [max] (A) VCEsat [max] (mV) VCEsat [max] (trans 2) (mV) RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) hFE [min] fT [typ] (MHz) Automotive qualified
PBLS1501V SOT666 SOT666 1.6 x 1.2 x 0.55 NPN/PNP 300 50 0 -150 -250 300 30 100 N

封装

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PBLS1501V PBLS1501V,115
(934058047115)
Obsolete C1 SOT666
(SOT666)
SOT666 REFLOW_BG-BD-1
SOT666_115

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PBLS1501V PBLS1501V,115 PBLS1501V rohs rhf rhf
品质及可靠性免责声明

文档 (9)

文件名称 标题 类型 日期
PBLS1501Y_PBLS1501V 15 V PNP BISS loadswitch Data sheet 2009-09-08
SOT666 3D model for products with SOT666 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT666_mk plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Marcom graphics 2017-01-28
SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Package information 2022-06-01
PBLS1501V_Nexperia_Product_Quality PBLS1501V Nexperia Product Quality Quality document 2019-05-20
PBLS1501V_Nexperia_Product_Reliability PBLS1501V Nexperia Product Reliability Quality document 2022-03-21
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PBLS1501V PBLS1501V SPICE model SPICE model 2024-03-26

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PBLS1501V PBLS1501V SPICE model SPICE model 2024-03-26
SOT666 3D model for products with SOT666 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.