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Click here for more informationFeatures and benefits
- 低集电极-发射极饱和电压VCEsat
- 高集电极电流能力IC和ICM
- 发热量更低、能效更高
- 减少了所需的印刷电路板面积
- BCP52和BCX52中等功率晶体管的高性价比替代选择
- 符合AEC-Q101标准
Applications
- 主要应用领域
- 汽车电子
- 电信基础设施
- 工业
- 电源管理
- DC-DC转换
- 电源线开关
- 外设驱动器
- 低电源电压应用中的驱动器(如灯具和LED)
- 电感负载驱动器(如继电器、蜂鸣器和电机)
参数类型
型号 | Package version | Package name | Size (mm) | Polarity | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) |
---|---|---|---|---|---|---|---|---|---|
PBSS5160V | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | PNP | 300 | -60 | -900 | 200 | 150 |
封装
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PBSS5160V | PBSS5160V,115 (934058114115) |
Discontinued / End-of-life | 51 |
(SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
环境信息
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PBSS5160V | PBSS5160V,115 | PBSS5160V |
文档 (10)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PBSS5160V | 60 V, 1 A PNP low V_CEsat (BISS) transistor | Data sheet | 2010-01-25 |
AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
PBSS5160V_Nexperia_Product_Quality | PBSS5160V Nexperia Product Quality | Quality document | 2019-05-20 |
PBSS5160V_Nexperia_Product_Reliability | PBSS5160V Nexperia Product Reliability | Quality document | 2022-03-21 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PBSS5160V | PBSS5160V SPICE model | SPICE model | 2024-03-26 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.