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Click here for more informationFeatures and benefits
- 低集电极-发射极饱和电压VCEsat
- 高集电极电流能力:IC和ICM
- 高集电极电流增益:hFE(高IC时)
- 发热量更低、能效更高
- 与传统晶体管相比,所需的印刷电路板(PCB)面积更少
- 符合AEC-Q101标准
Applications
- DC-DC转换
- MOSFET栅极驱动
- 电机控制
- 充电电路
- 低功率开关(如电机、风扇)
- 便携式应用
参数类型
型号 | Package version | Package name | Size (mm) | Polarity | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) |
---|---|---|---|---|---|---|---|---|---|
PBSS5220V | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | PNP | 300 | -20 | -2000 | 220 | 150 |
封装
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PBSS5220V | PBSS5220V,115 (934059261115) |
Withdrawn / End-of-life | N7 |
(SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
文档 (10)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PBSS5220V | 20 V, 2 A PNP low V_CEsat (BISS) transistor | Data sheet | 2010-01-25 |
AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
PBSS5220V_Nexperia_Product_Quality | PBSS5220V Nexperia Product Quality | Quality document | 2019-05-20 |
PBSS5220V_Nexperia_Product_Reliability | PBSS5220V Nexperia Product Reliability Quality document | Quality document | 2020-03-11 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PBSS5220V | PBSS5220V SPICE model | SPICE model | 2024-04-05 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.