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PESD3V3L5UK

Low-capacitance, unidirectional diode arrays

Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients.

此产品已停产

Features and benefits

  • ESD protection of up to five lines
  • Low diode capacitance
  • Max. peak pulse power: PPP = 30W
  • Low clamping voltage: VCL = 9.5V
  • AEC-Q101 qualified
  • Very low leakage current: IRM = 0.5 μA
  • ESD protection up to 20 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPP = 3.2A

Applications

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • Communication systems
  • Portable electronics
  • Subscriber Identity Module (SIM) card protection

参数类型

型号 Package name
PESD3V3L5UK XSON6

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PESD3V3L5UK PESD3V3L5UK,132
(934063976132)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PESD3V3L5UK PESD3V3L5UK,132 PESD3V3L5UK rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
PESD3V3L5UK_PESD5V0L5UK Low capacitance unidirectional fivefold ESD protection diode arrays Basic_type_numbers: PESD3V3L5UK; PESD5V0L5UK Data sheet 2023-04-13
PESD3V3L5UK_Nexperia_Product_Quality PESD3V3L5UK Nexperia Product Quality Quality document 2019-05-20
PESD3V3L5UK_Nexperia_Product_Reliability PESD3V3L5UK Nexperia Product Reliability Quality document 2019-04-29
PESD3V3L5UK PESD3V3L5UK SPICE model SPICE model 2012-07-22
PESD3V3L5UK PESD3V3L5UK SPICE model SPICE model 2024-02-20

支持

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模型

文件名称 标题 类型 日期
PESD3V3L5UK PESD3V3L5UK SPICE model SPICE model 2012-07-22
PESD3V3L5UK PESD3V3L5UK SPICE model SPICE model 2024-02-20

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册