单低VCEsat (BISS)功率晶体管

应对高效运行的挑战

在高功率系统中,节能运行的重要性丝毫不亚于低功率应用。我们的BISS解决方案能够最大程度地降低功耗和减少发热,助您应对该设计挑战。

参数搜索

Low VCEsat (BISS) power transistors single
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产品

型号 描述 状态 快速访问
PHPT60406NY 40 V, 6 A NPN high power bipolar transistor Production
PHPT60406PY 40 V, 6 A PNP high power bipolar transistor Production
PHPT60410NY 40 V, 10 A NPN high power bipolar transistor Production
PHPT60410PY 40 V, 10 A PNP high power bipolar transistor Production
PHPT60415NY 40 V, 15 A NPN high power bipolar transistor Production
PHPT60415PY 40 V, 15 A PNP high power bipolar transistor Production
PHPT60603NY 60V, 3 A NPN high power bipolar transistor Production
PHPT60603PY 60 V, 3 A PNP high power bipolar transistor Production
PHPT60606NY 60 V, 6 A NPN high power bipolar transistor Production
PHPT60606PY 60 V, 6 A PNP high power bipolar transistor Production
PHPT60610NY 60 V, 10 A NPN high power bipolar transistor Production
PHPT60610PY 60 V, 10 A PNP high power bipolar transistor Production
PHPT61002NYC 100V, 2 A NPN high power bipolar transistor Production
PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor Production
PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor Production
PHPT61002PYCLH 100 V, 2 A PNP high power bipolar transistor Production
PHPT61003NY 100 V, 3 A NPN high power bipolar transistor Production
PHPT61003PY 100 V, 3A PNP high power bipolar transistor Production
PHPT61006NY 100 V, 6 A NPN high power bipolar transistor Production
PHPT61006PY 100 V, 6 A PNP high power bipolar transistor Production
PHPT61010NY 100 V, 10 A NPN high power bipolar transistor Production
PHPT61010PY 100 V, 10 A PNP high power bipolar transistor Production

Marcom graphics (1)

文件名称 标题 类型 日期
LFPAK56_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)

文件名称 标题 类型 日期
nexperia_selection_guide_2019_201901 Selection guide 2019. Discretes, Logic and MOSFETs Selection guide 2018-12-12

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