双低VCEsat (BISS)晶体管

要获得设计优势,请使用我们的双BISS

如果您的设计必须维持低功耗和减少发热,我们的低VCEsat (BISS)器件是理想的解决方案。这些器件具备高能效和高集电极电流特性(凭借创新的网状发射极技术)。

主要特性和优势

  • 更小空间、更高效能
  • 高集电极电流增益hFE(高IC
  • 时)低集电极-发射极饱和电压VCEsat及相应的电阻RCEsat(最低<30 mΩ)
  • SOT89、SOT223、TO-126和DPAK等较大功率、中等功率晶体管的高性价比替代选择
  • 高集电极电流增益IC和ICM

关键应用

  • LAN和ADSL系统的电源开关/中等功率DC-DC转换
  • 反向器应用,如TFT显示屏
  • 中等功率外设驱动器,如风扇、马达
  • 电池充电器/负载开关
  • 适合数码相机与移动电话的频闪闪光灯

参数搜索

Low VCEsat (BISS) transistors double
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产品

型号 描述 状态 快速访问
DFN2020_6_SERIES Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A ACT
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4220PANS 20 V, 2 A NPN/NPN low VCEsat BISS double transistor Production
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Production
PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor Production
PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5220PAPS 20V, 2 A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5255PAPS 55V, 2A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS2515VPN 15 V low VCEsat NPN/PNP transistor Production
PBSS2515VS 15 V low VCEsat NPN double transistor Production
PBSS2515YPN 15 V low VCEsat NPN/PNP transistor Production
PBSS3515VS 15 V low VCEsat PNP double transistor Production
PBSS4021SN 20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor Production
PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS4021SPN 20 V NPN/PNP low V_CEsat (BISS) transistor Production
PBSS4032SN 30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor Production
PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS4032SPN 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4041SN 60 V, 6.7 A NPN/NPN low V_CEsat (BISS) transistor Production
PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS4041SPN 60 V NPN/PNP low V_CEsat (BISS) transistor Production
PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Production
PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Production
PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Production

Leaflet (1)

文件名称 标题 类型 日期
75017639 Full power in half the footprint - First bipolar transistors in LFPAK / Power-SO8 Leaflet 2015-02-20

Marcom graphics (1)

文件名称 标题 类型 日期
DFN2020D-6_SOT1118D_mk plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28

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