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650 V cascode GaN FETs
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产品
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Qualification | |
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Production | |
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production | |
| GAN063-650WSA | 650 V, 50 mΩ Gallium Nitride (GaN) FET | Production |
Visit our documentation center for all documentation
Application note (5) |
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|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Leaflet (4) |
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| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_document_leaflet_GaN_CCPAK_2023_CHN | CCPAK GaN FETs Chinese | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaN_CCPAK_2023 | CCPAK GaN FETs | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023_CHN | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023 | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
Marcom graphics (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| CCPAK1212_SOT8000-Combi_mk | Plastic, surface mounted copper clip package (CCPAK1212); 13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body | Marcom graphics | 2023-04-20 |
Technical note (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
User manual (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
White paper (5) |
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| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |