×

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

Click here for more information

GAN039-650NBBA

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

This product has been fully designed and qualified to meet AEC-Q101 requirements.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买

特性

  • Fully automotive qualified to AEC-Q101:
    • 175 °C rating suitable for thermally demanding environments
  • Simplified driver design as standard level MOSFET gate drivers can be used:
    • 0 V to 12 V drive voltage
    • Gate threshold voltage VGSth of 4 V
  • Robust gate oxide with ±20 V VGS rating
  • High gate threshold voltage of 4 V for gate bounce immunity
  • Low body diode Vf for reduced losses and simplified dead-time adjustments
  • Transient over-voltage capability for increased robustness
  • CCPAK package technology:
    • Improved reliability, with reduced Rth(j-mb) for optimal cooling
    • Lower inductances for lower switching losses and EMI
    • 175 °C maximum junction temperature
    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joints

目标应用

  • Automotive On-Board-Charger systems
  • Automotive DC-DC
  • Hard and soft switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
GAN039-650NBBASOT8000CCPAKDevelopmentN165039175605303001124Y15001472020-07-30

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
GAN039-650NBBAGAN039-650NBBAZ
( 9346 621 52139 )
Development039INBBA
CCPAK
(SOT8000)
SOT8000Reel 13" Q4/T2

品质、可靠性及化学成分

型号可订购的器件编号化学成分RoHS / RHFMSLMSL无铅
GAN039-650NBBAGAN039-650NBBAZ暂无信息
品质及可靠性免责声明

文档 (5)

文件名称标题类型日期
GAN039-650NBBA650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 packageData sheet2021-04-19
nexperia_document_leaflet_GaN_CCPAKCCPAK Power GaN FETs flyerLeaflet2020-08-17
nexperia_document_leaflet_CCPAK_2020_CHNCCPAK Power GaN FETs flyerLeaflet2020-08-20
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。