CCPAK GaN FETs

Power and efficiency in innovative SMD copper-clip packages

As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality, high-robustness SMD packaging to it’s GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simplified design of cascode configuration to eliminate the need for complicated drivers and controls.

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Top-side and bottom-side cooling

For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.

The first in the portfolio of GaN SMD packages, the CCPAK1212 and CCPAK1212i have a compact footprint of only 12 x 12 mm and a low package height of 2.5 mm.

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CCPAK GaN FETs videos

Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

CCPAK and next generation HV power GaN technology

主要特性和优势

  • Copper-clip
    • 3 times lower inductances than industry-standard packages for lower switching losses and EMI
    • Higher reliability compared to wire-bond solution
  • Thermal performance
    • Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
    • 175 °C Tj max
  • Manufacturability and robustness
    • Flexible leads for temperature cycling reliability
    • Flexible gull winged leads for robust board level reliability
    • Compatible with SMD soldering and AOI
  • Two cooling options
    • Bottom-side cooling (CCPAK1212)
    • Top-side cooling (CCPAK1212i)
  • Plan for Qualifications
    • AEC-Q101
    • MSL1
    • Halogen free

关键应用

  • Automotive EV
    • On board charging
    • DC-to-DC converters
    • Traction inverters
  • Industrial
    • Telecom and server Titanium grade power supplies
    • Industrial vehicle charging
    • Solar (PV) inverter
    • AC servo drive / Frequency inverters
    • Battery storage/UPS inverters

Products

GaN FETs

型号 描述 状态 快速访问
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Development
GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Development
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Development

Documentation

文件名称 标题 类型 日期
sot8000_3d Plastic, surface mounted copper clip package (CCPAK1212) 13 terminals, 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body Outline 3d 2020-03-16
nexperia_brochure_gan_202006 Nexperia GaN FETs brochure Brochure 2020-06-04
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

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Datasheets (4)

文件名称 标题 类型 日期
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2020-07-31
GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2020-07-31
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2020-07-31
GAN039-650NTBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2020-07-31