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NGW30T60M3DF

600 V, 30 A, carrier-stored Trench FS3 SC Robust IGBT

The NGW30T60M3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third‍⁠-⁠⁠‍generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 600 V, 30 A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NGW30T60M3DF NGW30T60M3DFQ 934665659127 SOT429-2 订单产品

特性

  • Collector current (IC) rated at 30 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature of 175 °C

  • Fully rated as a soft fast reverse recovery diode

  • 5 μs short circuit withstand time

  • RoHS compliant, lead-free plating

目标应用

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
  • Power inverters

    • Uninterruptible Power Supply (UPS) inverter

    • Photovoltaic (PV) strings

    • EV charging

  • Induction heating

  • Welding

参数类型

型号Product statusVCE [max] (V)IC [typ] (A)Switching frequencytsc [max] (µs)Tj [min] (°C)Tj [max] (°C)Package versionPackage name
NGW30T60M3DFProduction60030M35-40175SOT429-2TO-247-3L

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
NGW30T60M3DFNGW30T60M3DFQ
( 9346 656 59127 )
Active30T60M3DF
TO-247-3L
(SOT429-2)
SOT429-2SOT429-2_127

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
NGW30T60M3DFNGW30T60M3DFQNGW30T60M3DF
品质及可靠性免责声明

文档 (8)

文件名称标题类型日期
NGW30T60M3DF600 V, 30 A trench field-stop IGBT with full rated silicon diodeData sheet2023-07-06
AN90042Nexperia IGBT family product introductionApplication note2023-07-03
nexperia_igbt_flyer_lr_202304600/650 V IGBTs for industrial applicationsLeaflet2023-07-03
nexperia_igbt_flyer_lr_CHN_202304600/650 V IGBTs 适用于工业应用Leaflet2023-07-03
SOT429-2_TO-247-TLPlastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3LMarcom graphics2023-04-11
RS4769_TO-247_PLUS-CombiPlastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3LMarcom graphics2023-07-05
NGW30T60M3DF_L1NGW30T60M3DF SPICE modelSPICE model2023-07-05
SOT429-2_127TO-247-3L; Tube pack; Standard product orientationPacking information2023-04-03

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
NGW30T60M3DF_L1NGW30T60M3DF SPICE modelSPICE model2023-07-05

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
NGW30T60M3DFNGW30T60M3DFQ934665659127SOT429-2_127- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.