PMV65UNE

20 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

特性

  • Trench MOSFET technology
  • Low threshold voltage
  • Enhanced power dissipation capability of 940 mW
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

目标应用

  • LED driver
  • Power management
  • Low-side loadswitch
  • Switching circuits

参数类型

型号Package nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMV65UNETO-236ABProductionN12073831503.40.93.80.490.7N291522016-04-25

Package

型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号,(订购码(12NC))
PMV65UNE
TO-236AB
(SOT23)
SOT23Reel 7" Q3/T4Active%GJPMV65UNER
( 9340 688 53215 )

品质、可靠性及化学成分

型号可订购的器件编号化学成分RoHS / RHF无铅转换日期EFRIFRMTBF(小时)MSLMSL无铅
PMV65UNEPMV65UNERPMV65UNEAlways Pb-free244.01.138.85E811
品质及可靠性免责声明

文档 (10)

文件名称标题类型日期
PMV65UNE20 V, N-channel Trench MOSFETData sheet2017-05-09
AN10874LFPAK MOSFET thermal design guideApplication note2018-04-24
AN11113LFPAK MOSFET thermal design guide - Part 2Application note2018-04-24
AN11261Using RC Thermal ModelsApplication note2014-05-19
AN11599Using power MOSFETs in parallelApplication note2016-07-13
PMV65UNE_Nexperia_Product_ReliabilityPMV65UNE Nexperia Product ReliabilityQuality document2017-06-02
PMV65UNE_12_02_16PMF63UNE SPICE modelSPICE model2016-05-02
TN00008Power MOSFET frequently asked questions and answersTechnical note2016-10-31
SOT23_215Tape reel SMD; standard product orientation 12NC ending 215Packing2012-11-16
SOT23plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm bodyOutline drawing2018-01-16

支持

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模型

文件名称标题类型日期
PMV65UNE_12_02_16PMF63UNE SPICE modelSPICE model2016-05-02

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