Nexperia碳化硅MOSFET的RDSon温度稳定性卓越、开关速度快且短路鲁棒性高，可满足日益增长的大功率和高电压工业应用需求，是电动汽车充电基础设施、光伏逆变器和电机驱动器的优选产品。
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设计优势
- 开关损耗非常低
- 反向恢复快
- 开关速度快
- 关断损耗不受结温影响
- 体二极管速度快且稳健性佳
主要技术特性
- 卓越的RDSon温度稳定性
- 优异的栅极电荷及比值
- 栅极驱动损耗低
- 对寄生导通的耐受性高
- 出色的阈值电压一致性
- 体二极管正向压降非常低且稳健性高
- 低漏电流可以在1200V耐压下使用
关键应用
- 电动汽车充电基础设施
- 光伏逆变器
- 开关电源
- 不间断电源
- 电机驱动器
精选产品
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SiC MOSFETs
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Visit our documentation center for all documentation
Application note (1) |
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|---|---|---|---|
| File name | Title | Type | Date |
| AN90048 | Understanding of critical SiC parameters for efficient and stable designs | Application note | 2023-12-21 |
Brochure (2) |
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| File name | Title | Type | Date |
| CHINESE_FINAL_2023-0001_NEX_181_SiC_MOSFETs_Factsheet_Update | CHINESE_FINAL_2023_NEX_SiC_MOSFETs_Factsheet_Update | Brochure | 2023-11-29 |
| Final_2023-0001_NEX_181_SiC_MOSFETs_Factsheet_Update_v02 | NEX 181 SiC MOSFETs Factsheet v02 | Brochure | 2023-11-20 |
Data sheet (2) |
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| File name | Title | Type | Date |
| NSF040120L3A0 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Data sheet | 2023-12-06 |
| NSF080120L3A0 | 1200 V, 80 mΩ, N-channel SiC MOSFET | Data sheet | 2023-12-06 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
SPICE model (4) |
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| File name | Title | Type | Date |
| NSF040120L4A0_model_LTspice_V1_0 | NSF040120L4A0 LTspice model | SPICE model | 2024-03-21 |
| NSF080120L4A0_model_LTspice | NSF080120L4A0 LTspice model | SPICE model | 2024-02-29 |
| NSF080120L3A0_model_LTspice | NSF080120L3A0 LTspice model | SPICE model | 2024-02-29 |
| NSF040120L3A0_model_LTspice | NSF040120L3A0 LTspice model | SPICE model | 2024-02-29 |
User manual (1) |
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| File name | Title | Type | Date |
| UM90031 | A guide to using Nexperia SiC MOSFET LTspice models | User manual | 2024-02-29 |
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