双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

SOT8114-1

SOT8114-1

Plastic, surface-mounted top side cooling (TSC) package; 22 leads; 1.14 mm pitch; 15.0 × 15.4 mm × 2.3 mm body

外形图

封装版本 封装名称 封装说明 参考 发行日期
SOT8114-1 QDPAK Plastic, surface-mounted top side cooling (TSC) package; 22 leads; 1.14 mm pitch; 15.0 × 15.4 mm × 2.3 mm body MO-354 (JEDEC) 2026-01-07

相关文档

文件名称 标题 类型 日期
SOT8114-1 Plastic, surface-mounted top side cooling (TSC) package; 22 leads;1.14 mm pitch; 15.0 × 15.4 mm × 2.3 mm body Package information 2026-03-23
SOT8114-1_128 QDPAK; Reel pack for SMD, 13"; Q2/T3 product orientation Packing information 2026-03-23

采用此封装的产品

SiC power devices

型号 描述 快速访问
NSF017120T1A0 1200 V, 17 mΩ, N-channel SiC MOSFET
NSF030120T1A0 1200 V, 30 mΩ, N-channel SiC MOSFET
NSF060120T1A0 1200 V, 60 mΩ, N-channel SiC MOSFET
NSF040120T1A1 1200 V, 40 mΩ, N-channel SiC MOSFET
NSF030120T1A0-Q 1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications
NSF017120T1A0-Q 1200 V, 17 mΩ, N-channel SiC MOSFET for automotive applications
NSF040120T1A1-Q 1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications
NSF080120T1A1 1200 V, 80 mΩ, N-channel SiC MOSFET
NSF080120T1A1-Q 1200 V, 80 mΩ, N-channel SiC MOSFET for automotive applications
NSF060120T1A0-Q 1200 V, 60 mΩ, N-channel SiC MOSFET for automotive applications