双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
74ALVC164245DGG-Q100

74ALVC164245DGG-Q100 Production

16-bit dual supply translating transceiver; 3-state

The 74ALVC164245-Q100 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

The 74ALVC164245-Q100 is a 16-bit (dual octal) dual supply translating transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. It is designed to interface between a 3 V and 5 V bus in a mixed 3 V and 5 V supply environment.

This device can be used as two 8-bit transceivers or one 16-bit transceiver.

The direction control inputs (1DIR and 2DIR) determine the direction of the data flow. nDIR (active HIGH) enables data from nAn ports to nBn ports. nDIR (active LOW) enables data from nBn ports to nAn ports. The output enable inputs (1OE and 2OE), when HIGH, disable both nAn and nBn ports by placing them in a high-impedance OFF-state. Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to VCC(B).

In suspend mode, when one of the supply voltages is zero, there will be no current flow from the non-zero supply towards the zero supply. The nAn outputs must be set 3-state and the voltage on the A-bus must be smaller than Vdiode (typical 0.7 V). VCC(B) ≥ VCC(A) (except in suspend mode).

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
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产品细节

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range:

    • 3 V port (VCC(A)): 1.5 V to 3.6 V

    • 5 V port (VCC(B)): 1.5 V to 5.5 V

  • CMOS low power consumption

  • Overvoltage tolerant inputs to 5.5 V

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Control inputs voltage range from 2.7 V to 5.5 V

  • High-impedance outputs when VCC(A) or VCC(B) = 0 V

  • Complies with JEDEC standards:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册