双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AVCH8T245PW

74AVCH8T245PW Production

8-bit dual supply translating transceiver with configurable voltage translation; 3-state

The 74AVCH8T245 is an 8-bit, dual supply transceiver that enables bidirectional level translation. It features two 8-bit input-output ports (An and Bn), a direction control input (DIR), a output enable input (OE) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins An, OE and DIR are referenced to VCC(A) and pins Bn are referenced to VCC(B). A HIGH on DIR allows transmission from An to Bn and a LOW on DIR allows transmission from Bn to An. The output enable input (OE) can be used to disable the outputs so the buses are effectively isolated.

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both An and Bn outputs are in the high-impedance OFF-state. The bus-hold circuitry on the powered-up side always stays active.

The 74AVCH8T245 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.

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产品细节

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 0.8 V to 3.6 V

    • VCC(B): 0.8 V to 3.6 V

  • Maximum data rates:

    • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)

    • 260 Mbit/s (≥ 1.1 V to 3.3 V translation)

    • 260 Mbit/s (≥ 1.1 V to 2.5 V translation)

    • 210 Mbit/s (≥ 1.1 V to 1.8 V translation)

    • 150 Mbit/s (≥ 1.1 V to 1.5 V translation)

    • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)

  • Suspend mode

  • Bus hold on data inputs

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册