双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NID1101UP

NID1101UP Qualification

1.5 V to 5.5 V, 1.5 A, compact ideal diode with forward voltage blocking

The NID1101 is a compact, high-efficiency ideal diode that replaces traditional Schottky diodes in low-voltage power systems. It provides a low froward voltage drop alternative to traditional Schottky diodes while integrating both forward and true reverse current blocking.

The NID1101 operates across a 1.5 V to 5.5 V input range, and supports up to 1.5 A of continuous current. It is well suited for applications that require minimal power loss and precise current control, such as power OR-ing, redundant supply switchover, and reverse current protection. In dual-supply configurations, it enables seamless transition between sources without the need for additional control logic.

An active-high enable (EN) pin governs device operation.

  • When EN is low, the NID1101 remains off, blocking current flow in both directions.

  • When EN is asserted and the input voltage (IN) exceeds the output voltage (OUT), the device activates with controlled turn-on, managing inrush current during startup.

Once enabled, the device starts up in a controlled manner limiting the amount of inrush current. Once startup is completed, the device regulates the voltage between the IN and OUT pins that is approximately an order of magnitude lower than similarly rated Schottky diodes.

To ensure robust system performance, the NID1101 integrates short-circuit current limiting and thermal shutdown protection. If the output voltage rises above the input, the device automatically enters a high⁠-⁠impedance state with minimal reverse leakage current, effectively preventing reverse conduction.

A variety of power OR-ing configurations are supported for system flexibility:

  • Two, or more, NID1101 devices
  • NID1101s and conventional Schottky diodes

The NID1101 is available in a compact WLCSP4 (SOT8113) package and is characterized for operation over an ambient temperature range of –40 °C to 125 °C.

  • 产品细节
  • 文档
  • 支持
  • 订购中
  • 交互式数据手册

产品细节

Features and benefits

  • Input voltage range: 1.5 V to 5.5 V
  • Low forward drop voltage: VFWD = 29 mV (typ. at 3.6 V input and 100 mA load current)

  • Reverse voltage blocking always

    • Low leakage current when VOUT > VIN
  • Forward voltage blocking when disabled

  • Low quiescent current

  • Enhanced load transient response

  • Controlled slew rate at start-up

  • Over temperature protection

  • Short-circuit protection

  • SOT8113, 4-pin, wafer level chip scale package

  • Specified over Ta= -40 °C to +125 °C

Applications

  • Smart wearables
  • OR-ing applications
  • Diode replacement
  • Battery backup systems
  • USB powered devices
Figure 1. Simplified application

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

品质及可靠性免责声明

支持

如果您有支持方面的疑问,请告知我们。如需获得设计支持,请告知我们并填写技术支持表格,我们会尽快回复您。

请访问我们的社区论坛联系我们

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册