双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NP100T12P2T3

NP100T12P2T3 End of life

1200 V, 100 A Field Stop Trench IGBT

IGBT power module provides ultra-low conduction loss as well as short circuit ruggedness. They are designed for applications such as inverters for motor drivers and servo drivers.

  • 产品细节
  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • Low switching losses and low saturation voltage VCE(sat)
  • 10 μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175 °C
  • Low stray inductance package
  • Fast and soft reverse recovery anti-parallel free-wheeling diode
  • RoHS compliant product
  • Integrated NTC thermistor temperature sensor

Applications

  • Inverter for motor drivers and servo drivers
  • AC/DC servo drive amplifier

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

品质及可靠性免责声明

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive data sheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive data sheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册