- 产品细节
- 文档
- 支持
- 交互式数据手册
产品细节
Features and benefits
Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
Applications
LED sign
Graphic status panel
Fault status indicator
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
More information品质及可靠性免责声明
支持
如果您有支持方面的疑问,请告知我们。如需获得设计支持,请告知我们并填写技术支持表格,我们会尽快回复您。
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Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
交互式数据手册
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
交互式数据手册