双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN4R8-100YSE

PSMN4R8-100YSE Production

N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E

N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSMN4R8-100YSE complements the latest "hot-swap" controllers ‒ robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses delivering optimum efficiency when turned fully ON and an 80% smaller footprint than existing D2PAK types.

  • 产品细节
  • 文档
  • 支持
  • 订购中
  • 交互式数据手册

产品细节

Features and benefits

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation

  • Low RDSon for low I2R conduction losses

  • LFPAK56E package for applications that demand the highest performance and reliability in a 30 mm2 footprint

Applications

  • Hot swap

  • Load switch

  • Soft start

  • E-fuse

  • Telecommunication systems based on a 48 V backplane/supply rail

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

品质及可靠性免责声明

支持

如果您有支持方面的疑问,请告知我们。如需获得设计支持,请告知我们并填写技术支持表格,我们会尽快回复您。

请访问我们的社区论坛联系我们

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册