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Click here for more informationPXP9R1-30QL
30 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
Applications
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PXP9R1-30QL | SOT8002-1 | MLPAK33 | Production | P | 1 | -30 | 9.1 | 12.8 | 150 | -17.7 | 11.1 | 29 | 57 | 4.8 | 9 | -1.4 | N | 2860 | 320 | 2021-01-04 |
Series
文档 (6)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
SOT8002_1 | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
SOT8002-1 | 3D model for products with SOT8002-1 package | Design support | 2021-01-28 |
SOT8002-1 | plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body | Package information | 2023-05-22 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
订购、定价与供货
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.