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74LVC30AD

8-input NAND gate

The 74LVC30A is an 8-input NAND gate.

Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

此产品已停产

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • Inputs accept voltages up to 5.5 V

  • CMOS low power consumption

  • Direct interface with TTL levels

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A (2.3 V to 2.7 V)

    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM JEDEC JS-001-2012 exceeds 2000 V

    • MM JESD22-A115-C exceeds 200 V

    • CDM JESD22-C101F exceeds 1000 V

  • Specified from ‑40 °C to +85 °C and ‑40 °C to +125 °C

Applications

参数类型

型号 Product status VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Rth(j-a) (K/W) Ψth(j-top) (K/W) Rth(j-c) (K/W) Package name
74LVC30AD End of life 1.65 - 5.5 CMOS/LVTTL ± 24 3.6 175 1 low -40~125 112 22.5 70 SO14

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC30AD 74LVC30ADJ
(935304016118)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC30AD 74LVC30ADJ 74LVC30AD rohs rhf rhf
品质及可靠性免责声明

Series

文档 (2)

文件名称 标题 类型 日期
74LVC30A 8-input NAND gate Data sheet 2019-03-15
lvc30a lvc30a IBIS model IBIS model 2018-11-29

支持

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模型

文件名称 标题 类型 日期
lvc30a lvc30a IBIS model IBIS model 2018-11-29

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册