双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AHC2G126DP

74AHC2G126DP Production

Dual buffer/line driver; 3-state

The 74AHC2G126; 74AHCT2G126 is a dual buffer/line driver with 3-state outputs controlled by the output enable inputs (nOE). Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

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  • 文档
  • 支持
  • 订购中
  • 交互式数据手册

产品细节

Features and benefits

  • Symmetrical output impedance

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • Input levels:

    • For 74AHC2G126: CMOS level

    • For 74AHCT2G126: TTL level

  • High noise immunity

  • CMOS low power dissipation

  • Balanced propagation delays

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +125 °C

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册