双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
74LVCH2T45GT

74LVCH2T45GT Production

Dual supply translating transceiver; 3-state

The 74LVC2T45; 74LVCH2T45 are dual bit, dual supply translating transceivers with 3-state outputs that enable bidirectional level translation. They feature two 2-bits input-output ports (nA and nB), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 1.2 V and 5.5 V making the device suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins nA and DIR are referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allows transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.

The devices are fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A port and B port are in the high-impedance OFF-state.

Active bus hold circuitry in the 74LVCH2T45 holds unused or floating data inputs at a valid logic level.
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产品细节

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 1.2 V to 5.5 V

    • VCC(B): 1.2 V to 5.5 V

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • Maximum data rates:

    • 420 Mbps (3.3 V to 5.0 V translation)

    • 210 Mbps (translate to 3.3 V))

    • 140 Mbps (translate to 2.5 V)

    • 75 Mbps (translate to 1.8 V)

    • 60 Mbps (translate to 1.5 V)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • ±24 mA output drive (VCC = 3.0 V)

  • Inputs accept voltages up to 5.5 V

  • Low power consumption: 16 μA maximum ICC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 4000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

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More information

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The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册