双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVT16646ADGG

74LVT16646ADGG End of life

3.3 V 16-bit bus transceiver; 3-state

The 74LVT16646A is a high-performance BiCMOS product designed for VCC operation at 3.3 V. This device is a 16-bit transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The control function implementation minimizes external timing requirements. The device features an output enable (OE) input for easy cascading and a direction (DIR) input for direction control.

Data on bus A or bus B is clocked into the registers on the LOW-to-HIGH transition of the appropriate clock (CPAB or CPBA). The select control (SAB and SBA) inputs can multiplex stored and real-time (transparent mode data).

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  • 交互式数据手册

产品细节

Features and benefits

  • 16-bit universal bus interface
  • 3-state buffers
  • Output capability: from +64 mA to -32 mA
  • TTL input and output switching levels
  • Input and output interface capability to systems at 5 V supply
  • Bus-hold data inputs eliminate the need for external pull-up resistors to hold unused inputs
  • Live insertion and extraction permitted
  • No bus-current loading when output is tied to 5 V bus
  • Power-up reset
  • Power-up 3-state
  • Latch-up protection exceeds 500 mA per JESD78
  • ESD protection:
    • MIL STD 883 Method 3 015: exceeds 2000 V
    • Machine model: exceeds 200 V

Applications

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More information

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册