双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BUK7909-75AIE

BUK7909-75AIE End of life

N-channel TrenchPLUS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

  • 产品细节
  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • AEC-Q101 compliant
  • Electrostatically robust due to integrated protection diodes
  • Low conduction losses due to low on-state resistance
  • Reduced component count due to integrated current sensor
  • Suitable for standard level gate drive sources

Applications

  • Electrical Power Assisted Steering (EPAS)
  • Variable Valve Timing for engines

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册