双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

IP3048CX5

IP3048CX5 End of life

Integrated dual channel passive LC-filter network with ESD protection to IEC61000-4-2 level 4

The IP3048CX5 is a low-Ωic, dual channel LC low-pass filter array which is designed to provide filtering of undesired RF signals. In addition, IP3048CX5 incorporates diodes to provide protection to downstream components from ElectroStatic Discharge (ESD) voltages as high as ±15 kV contact discharge according the IEC 61000-4-2 model, far exceeding standard level 4.

The device is fabricated using monolithic silicon technology and integrates two inductors and four pairs of back-to-back diodes in a 0.5 mm pitch Wafer-Level Chip-Scale Package (WLCSP). These features make the IP3048CX5 ideal for use in applications requiring the utmost in miniaturization such as mobile phone handsets, cordless telephones and other portable electronic devices.

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产品细节

Features and benefits

  • Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
  • Integrated dual channel π-type LC-filter network
  • 0.25 Ω series resistance per channel; 190 pF channel capacitance
  • Integrated ESD protection withstanding ±15 kV contact discharge, far exceeding IEC 61000-4-2 level 4
  • WLCSP with 0.5 mm pitch

Applications

Audio line ElectroMagnetic Interference (EMI) filtering and ESD protection in e.g.

  • Cellular and Personal Communication System (PCS) mobile handsets
  • DECT
  • Portable media player

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More information

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册