双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

IP3088CX5

IP3088CX5 End of life

Integrated 2, 4, 6 and 8-channel passive LC-filter network with ESD protection to IEC61000-4-2 level 4

IP3088CX5, IP3088CX10, IP3088CX15 and IP3088CX20 is a 2, 4, 6 and 8-channel LC low-pass filter array family which is designed to provide filtering of undesired RF signals on the I/O ports of portable communication or computing devices. In addition, IP3088CX5, IP3088CX10, IP3088CX15 and IP3088CX20 incorporates diodes to provide protection to downstream components from ElectroStatic Discharge (ESD) voltages as high as ±15 kV according IEC 61000-4-2 level 4.

The devices are fabricated using monolithic silicon technology and integrate and incorporate up to 16 coils and 24 diodes in a 0.5 mm pitch Wafer-Level Chip-Scale Package (WLCSP).

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  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
  • Integrated 2, 4, 6 and 8-channel π-type LC-filter network
  • 18 Ω channel series resistance; ≤ 45 pF (at 2.5 V DC) channel capacitance
  • Integrated ESD protection withstanding ±15 kV contact discharge, far exceeding IEC 61000-4-2 level 4
  • ESD protection to ±30 kV contact discharge, per MIL-STD-883D, Method 3015
  • WLCSP with 0.5 mm pitch

Applications

  • Cellular and Personal Communication System (PCS) mobile handsets
  • Cordless telephones
  • Wireless data (WAN/LAN) systems and PDAs

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册