双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
IP4047CX6

IP4047CX6 End of life

Dual channel integrated passive filter network with ESD

The IP4047CX6 is a low ohmic, dual-channel RC low-pass filter array which is designed to provide filtering of undesired RF signals. In addition, the IP4047CX6 incorporates diodes to provide protection to downstream components from ElectroStatic Discharge (ESD) voltages as high as ±15 kV contact, according to the IEC 61000-4-2 standard, far exceeding the level 4. The IP4047CX6 is fabricated using monolithic silicon technology and integrates two resistors and four pairs of back-to-back diodes in a single Wafer-Level Chip-Scale Package (WLCSP). These features make the IP4047CX6 ideal for use in applications requiring the utmost in miniaturization such as mobile phone handsets, cordless telephones and personal digital devices.
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  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • 2-channel integrated π-type RC-filter network
  • Downstream ESD protection of ±15 kV contact according to IEC 61000-4-2 ESD model, far exceeding level 4
  • 0.95 Ω series resistance; 280 pF channel capacitance
  • WLCSP with 0.5 mm pitch

Applications

Audio line EMI-filtering and ESD protection in:

  • Cellular and PCS mobile handsets
  • Cordless telephones

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册