双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PBSM5240PF

PBSM5240PF End of life

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.

  • 产品细节
  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat

  • High collector current capability IC and ICM

  • High collector current gain (hFE) at high IC

  • High energy efficiency due to less heat generation

  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • Loadswitch

  • Battery-driven devices

  • Power management

  • Charging circuits

  • Power switches (e.g. motors, fans)

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More information

品质及可靠性免责声明

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册