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PBSS2540E

40 V, 500 mA NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

PNP complement: PBS3540E.

此产品已停产

Alternatives

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)

参数类型

型号 Package version Package name Size (mm) Polarity Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] fT [min] (MHz) Automotive qualified
PBSS2540E SOT416 SC-75 1.6 x 0.75 x 0.9 NPN 150 40 500 200 250 N

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PBSS2540E PBSS2540E,115
(934059169115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PBSS2540E PBSS2540E,115 PBSS2540E rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Data sheet 2009-11-23
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note 2021-06-23
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PBSS2540E PBSS2540E SPICE model SPICE model 2024-04-05

支持

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模型

文件名称 标题 类型 日期
PBSS2540E PBSS2540E SPICE model SPICE model 2024-04-05

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册