双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BAS29; BAS31; BAS35

General purpose controlled avalanche (double) diodes

General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode.

Features and benefits

  • Small plastic SMD package

  • Switching speed: max. 50 ns

  • General application

  • Continuous reverse voltage: max. 90 V

  • Repetitive peak reverse voltage: max. 110 V

  • Repetitive peak forward current: max. 600 mA

  • Repetitive peak reverse current: max. 600 mA.

  • AEC-Q101 qualified

Applications

  • General purpose switching in e.g. surface mounted circuits.

文档 (2)

文件名称 标题 类型 日期
BAS35 General purpose double switching diode Data sheet 2025-10-28
mam233 Block diagram: BAS29, BAS31, BAS35 Block diagram 2009-11-03

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