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BSS87

200 V, N-channel vertical D-MOS transistor

N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

不建议用在新设计中(NRND)。

Features and benefits

  • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.

  • Very fast switching

  • No secondary breakdown

Applications

  • Relay driver

  • High-speed line driver

  • Load-side loadswitch

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) integrated gate-source ESD protection diodes Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BSS87
SOT89 SOT89 Not for design in N 1 200 20 3000 4000 N 150 0.7 1.4 5.5 0.58 N 100 20 2011-01-24

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BSS87
BSS87,115
(933943940115)		 Active KA SOT89
(SOT89) 		SOT89 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT89_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BSS87
BSS87,115 BSS87 rohs rhf rhf
品质及可靠性免责声明

文档 (20)

文件名称 标题 类型 日期
BSS87 200 V, N-channel vertical D-MOS transistor Data sheet 2014-12-09
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor Data sheet 2017-05-29
PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor Data sheet 2017-05-29
SOT89 3D model for products with SOT89 package Design support 2018-12-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT89_mk plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body Marcom graphics 2017-01-28
SOT89 plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body Package information 2022-05-28
SOT89_115 Reel pack for SMD, 7"; Q2/T3 product orientation Packing information 2020-04-21
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BSS87_22_06_2012 BSS87 Spice model SPICE model 2013-12-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BSS87_22_06_2012 BSS87 Spice model SPICE model 2013-12-12
SOT89 3D model for products with SOT89 package Design support 2018-12-05

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
BSS87 BSS87,115 933943940115 Active SOT89_115 1,000 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
BSS87 BSS87,115 933943940115 SOT89 订单产品