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PMN45EN

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此产品已停产

Alternatives

Features and benefits

  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for low gate drive sources

Applications

  • Battery powered motor control
  • DC-to-DC convertors
  • High-speed switching in set top box power supplies
  • Load switch in notebook computers

参数类型

型号 Package version Package name Product status Channel type Nr of transistors RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) Automotive qualified Release date
PMN45EN SOT457 TSOP6 End of life N 1 40 50 5.2 2.35 6.1 1.75 N 2011-01-24

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMN45EN PMN45EN,135
(934057328135)		 Obsolete SOT457
TSOP6
(SOT457) 		SOT457 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT457_135
PMN45EN,165
(934057328165)		 Obsolete SOT457_165

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMN45EN PMN45EN,135 PMN45EN rohs rhf rhf
PMN45EN PMN45EN,165 PMN45EN rohs rhf rhf
品质及可靠性免责声明

文档 (18)

文件名称 标题 类型 日期
PMN45EN TrenchMOS (tm) enhanced logic level FET Data sheet 2002-09-26
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT457 3D model for products with SOT457 package Design support 2022-11-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSOP6_SOT457_mk plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body Marcom graphics 2017-01-28
SOT457 plastic, surface-mounted package (SC-74; TSOP6); 6 leads Package information 2023-03-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
MAR_SOT457 MAR_SOT457 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT457 3D model for products with SOT457 package Design support 2022-11-04

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册