主要特性
- 零正向和反向恢复
- 开关性能不受温度影响
- 开关操作快速流畅
- 高IFSM能力
- 低泄漏电流
- 易于并联/正温度系数
- 出色的品质因数(Qc x VF)
- 高达175 °C结温的热稳定性
- AEC-Q101质量标准
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关键应用
- 工业和消费类应用
- 开关模式电源(SMPS)
- 交流-直流和直流-直流转换器
- 电池充电基础设施
- 服务器和电信电源
- 不间断电源(UPS)
- 光伏逆变器
汽车应用：
- 车载充电器(OBC)
- 逆变器
- 高压直流-直流转换器
主要优势
- 高功率密度
- 降低系统成本
- 系统小型化
- 高温工作
- 减少EMI
- 提高了耐用性和可靠性
Featured products
Featured documents
Latest news and blogs
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参数搜索
Silicon Carbide (SiC) Schottky diodes
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产品
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| PSC0665B1 | 650 V, 6 A SiC Schottky diode in bare die | Production | |
| PSC0665H | 650 V, 6 A SiC Schottky diode in DPAK R2P | Production | |
| PSC0665K | 650 V, 6 A SiC Schottky diode in TO-220-2 R2P | Production | |
| PSC1065B1 | 650 V, 10 A SiC Schottky diode in bare die | Production | |
| PSC1065B1-Q | 650 V, 10 A SiC Schottky diode in bare die for automotive applications | Production | |
| PSC1065H | 650 V, 10 A SiC Schottky diode in DPAK R2P | Production | |
| PSC1065H-Q | 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications | Production | |
| PSC1065J-Q | 650 V, 10 A SiC Schottky diode in D2PAK R2P for automotive applications | Production | |
| PSC1065K | 650 V, 10 A SiC Schottky diode in TO-220-2 R2P | Production | |
| PSC1665B1 | 650 V, 16 A SiC Schottky diode in bare die | Production | |
| PSC1665J | 650 V, 16 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC1665J-Q | 650 V, 16 A SiC Schottky diode in D2PAK R2P for automotive applications | Production | |
| PSC1665L | 650 V, 16 A SiC Schottky diode in TO247 R2P | Production | |
| PSC20120J | 1200 V, 20 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC20120J-Q | 1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications | Production | |
| PSC20120L | 1200 V, 20 A SiC Schottky diode in TO247 R2P | Production | |
| PSC2065B1 | 650 V, 20 A SiC Schottky diode in bare die | Production | |
| PSC2065J | 650 V, 20 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC2065J-Q | 650 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications | Production | |
| PSC2065L | 650 V, 20 A SiC Schottky diode in TO247 R2P | Production |
Visit our documentation center for all documentation
Brochure (1) |
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|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_DIODE_Handbook.pdf | Nexperia DIODE Handbook Chinese | Brochure | 2023-09-20 |
Leaflet (2) |
|||
| 文件名称 | 标题 | 类型 | 日期 |
| 2025-0001_NEX_130_Leaflet-SiC_Diodes-CN.pdf | SiC肖特基二极管 全新高功率碳化硅二极管产品组合 | Leaflet | 2025-08-01 |
| 2025-0001NEX_130_Leaflet-SiC_Diodes-July_2025.pdf | 2025-0001 NEX_130_Leaflet - SiC Diodes - July 2025 | Leaflet | 2025-07-07 |
Marcom graphics (1) |
|||
| 文件名称 | 标题 | 类型 | 日期 |
| RS2175_D2PAK_SOT404_B_mk_2-pin.png | D2PAK SOT404_B MARCOM graphic | Marcom graphics | 2021-10-29 |
Technical note (1) |
|||
| 文件名称 | 标题 | 类型 | 日期 |
| TN90007.pdf | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
White paper (2) |
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| 文件名称 | 标题 | 类型 | 日期 |
| 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese_FINAL_version.pdf | 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese | White paper | 2023-06-08 |
| 2023-0001_NEX_029_Whitepaper_SiC-diodes_V04.pdf | Whitepaper SiC diodes | White paper | 2023-04-21 |