Addressing the growing demand for high-power and high-voltage industrial applications, Nexperia’s Silicon Carbide MOSFETs, with their excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness, make them the product of choice for E-vehicle charging infrastructure, photovoltaic inverters, and motor drives.
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Design Benefits
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature independent turn-off switching losses
- Very fast and robust intrinsic body diode
Key technical features
- Best-in-class RDSon temperature dependency
- Superior gate charge and beneficial gate charge ratio
- Low power consumption of gate drivers
- High tolerance against parasitic turn-on
- Ultra small threshold voltage tolerance
- Robust body diode with very low forward voltage
- Lower leakage current up to 1200 V
Key applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
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SiC MOSFETs
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Visit our documentation center for all documentation
Brochure (2) |
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|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| CHINESE_FINAL_2023-0001_NEX_181_SiC_MOSFETs_Factsheet_Update | CHINESE_FINAL_2023_NEX_SiC_MOSFETs_Factsheet_Update | Brochure | 2023-11-29 |
| Final_2023-0001_NEX_181_SiC_MOSFETs_Factsheet_Update_v02 | NEX 181 SiC MOSFETs Factsheet v02 | Brochure | 2023-11-20 |
Data sheet (2) |
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| 文件名称 | 标题 | 类型 | 日期 |
| NSF040120L3A0 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Data sheet | 2023-11-29 |
| NSF080120L3A0 | 1200 V, 80 mΩ, N-channel SiC MOSFET | Data sheet | 2023-11-29 |
Marcom graphics (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |