双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Inside the device - Ruggedness testing of SiC MOSFETs

About the webinar

This on-demand webinar deal with key aspects, such as temperature stability, short-circuit destruction time and immunity against parasitic turn-on (PTO). Learn everything about their impact on system performance.

Develop the expertise to:

  • Assess device thermal performance

  • Distinguish between different short-circuit types

  • Understand how packages impact short-circuit

  • Identify whether a device is intrinsically robust against PTO

Evaluate the impact of gate drive strategy and layout.