双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
HEF4794BT

HEF4794BT Production

8-stage shift-and-store register LED driver

The HEF4794B is an 8-stage serial shift register. It has a storage latch associated with each stage for strobing data from the serial input (D) to the parallel LED driver outputs (QP0 to QP7). Data is shifted on the positive-going clock (CP) transitions. The data in each shift register stage is transferred to the storage register when the strobe input (STR) is HIGH. Data in the storage register appears at the outputs whenever the output enable input (OE) signal is HIGH.

Two serial outputs (QS1 and QS2) are available for cascading a number of HEF4794B devices. Serial data is available at QS1 on positive-going clock edges to allow high-speed operation in cascaded systems with a fast clock rise time. The same serial data is available at QS2 on the next negative going clock edge. This is used for cascading HEF4794B devices when the clock has a slow rise time.

It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.
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产品细节

Features and benefits

  • Wide supply voltage range from 3.0 V to 15.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Fully static operation

  • 5 V, 10 V, and 15 V parametric ratings

  • Standardized symmetrical output characteristics

  • Complies with JEDEC standard JESD 13-B

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册