双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

High-voltage GaN bi-directional switches

Unlocking true single-stage power conversion

Nexperia’s high-voltage bi-directional GaN devices enable true single-stage power conversion for both AC/DC and DC/AC applications. By eliminating intermediate stages and bulky DC‑link components, these solutions simplify system design and reduce component count while improving efficiency and power density. Designed for high-frequency operation and flexible power flow, they open the door to more compact, scalable and efficient next-generation power systems.

 

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