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GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

  • Ultra-low reverse recovery charge

  • Simple gate drive (0 V to +10 V or 12 V)

  • Robust gate oxide (±20 V capability)

  • High gate threshold voltage (+4 V) for very good gate bounce immunity

  • Very low source-drain voltage in reverse conduction mode

  • Transient over-voltage capability

Applications

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

参数类型

型号 Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN041-650WSB SOT429-3 TO-247-3L Production cascode N 1 650 41 175 47.2 6.6 22 187 150 3.9 N 1500 147 2020-05-14

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
GAN041-650WSB GAN041-650WSBQ
(934661752127)		 Active GAN041 650WSB SOT429-3
TO-247-3L
(SOT429-3) 		SOT429-3 Not available

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
GAN041-650WSB GAN041-650WSBQ GAN041-650WSB rohs rhf
品质及可靠性免责声明

Series

文档 (21)

文件名称 标题 类型 日期
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Data sheet 2021-01-12
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
nexperia_document_leaflet_GaN_FETs_2023 Power GaN FETs leaflet Leaflet 2025-01-10
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19
SOT429-3 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2023-12-07
GAN041_650WSB GAN041-650WSB SPICE model SPICE model 2021-03-24
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
GaN041-650WSB GaN041-650WSB Foster thermal model Thermal model 2021-03-25
GaN041-650WSB_RC_Thermal_Model GaN041-650WSB RC thermal model Thermal model 2021-03-25
GaN041-650WSB_cauer GaN041-650WSB Cauer thermal model Thermal model 2021-03-25
UM90010 NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB User manual 2023-10-23
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
GAN041_650WSB GAN041-650WSB SPICE model SPICE model 2021-03-24
GaN041-650WSB GaN041-650WSB Foster thermal model Thermal model 2021-03-25
GaN041-650WSB_RC_Thermal_Model GaN041-650WSB RC thermal model Thermal model 2021-03-25
GaN041-650WSB_cauer GaN041-650WSB Cauer thermal model Thermal model 2021-03-25

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
GAN041-650WSB GAN041-650WSBQ 934661752127 Active SOT429-3_127 300 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
GAN041-650WSB GAN041-650WSBQ 934661752127 SOT429-3 订单产品