双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

80 - 200 V high-power GaN devices

High-power efficiency for next-gen power systems

Nexperia’s high-power medium-voltage (80 V to 200 V) GaN platform is engineered for the demanding, high-power applications driving the future of power conversion. Combining ultra-low RDS(on), low QG and QOSS, and high-frequency switching, these devices deliver exceptional efficiency, power density and dynamic performance. Available in advanced QFN packages with top- and bottom-side cooling, they support high current levels with excellent thermal performance. Ideal for AI datacenters, industrial systems, robotics, energy and motor drives, they enable lower losses, faster response and more compact, scalable power designs for next-generation high-power systems.

产品

型号 描述 状态 快速访问
GANE0R8-100QTM 100 V, 0.75 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
GANE1R2-100QTM 100 V, 1.2 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE1R8-100QBA 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) Production
GANE3R5-200QTM 200 V, 3.5 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) Production
GANE7R2-200QTM 200 V, 7.2 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development

如果您有支持方面的疑问，请告知我们。如需获得设计支持，请告知我们并填写技术支持表格，我们会尽快回复您。

请访问我们的社区论坛或联系我们。


交叉参考